Irf3206 Mosfet

Type Designator: IRF3205

Rad tolerant low rds hermetic power mosfet - p-channel: 1 2 3: sensitron: shd224701: low rds hermetic power mosfet - n-channel: 1 2: sensitron: ntts2p03r2. 3206 Mosfet N-ch 55v 110a To-220ab Irf3206, Find Complete Details about 3206 Mosfet N-ch 55v 110a To-220ab Irf3206,Irf3206,3206,3206 Mosfet N-ch 55v 110a To-220ab Irf3206 from Transistors Supplier or Manufacturer-JIN YANG GUANG KE ELECTRONICS LIMITED.

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 98 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 146 nC

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO220AB

IRF3205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF3205 Datasheet (PDF)

0.1. irf3205zpbf irf3205zlpbf irf3205zspbf.pdf Size:379K _international_rectifier

PD - 95129AIRF3205ZPbFIRF3205ZSPbFIRF3205ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5ml Lead-FreeGDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

0.2. auirf3205zstrl.pdf Size:330K _international_rectifier

PD - 97542AUTOMOTIVE GRADEAUIRF3205ZAUIRF3205ZSFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance 175C Operating Temperature DV(BR)DSS55V Fast SwitchingRDS(on) max.6.5m Repetitive Avalanche Allowed up toTjmaxGID (Silicon Limited) 110A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Li

0.3. irf3205lpbf irf3205spbf.pdf Size:280K _international_rectifier

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

0.4. irf3205s.pdf Size:160K _international_rectifier

PD - 94149IRF3205S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 8.0mG Fast Switching Fully Avalanche RatedID = 110A SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low on-res

0.5. irf3205pbf.pdf Size:215K _international_rectifier

PD-94791BIRF3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achievee

0.6. irf3205.pdf Size:92K _international_rectifier

PD-91279EIRF3205HEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 8.0mG Fast Switching Fully Avalanche RatedID = 110A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

0.7. irf3205z.pdf Size:181K _international_rectifier

PD - 94653AUTOMOTIVE MOSFETIRF3205ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 6.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest

0.8. irf3205 .pdf Size:97K _international_rectifier

0.9. irf3205a irf3205h.pdf Size:596K _nell

RoHS IRF3205 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(110A, 55Volts)DESCRIPTION The Nell IRF3205 is a three-terminal silicon device with current conduction capabilityDDof 110A, fast switching speed, low on-stateresistance, breakdown voltage rating of 55V,and max. threshold voltage of 4 volts. They are designed as an extremely efficient

0.10. irf3205.pdf Size:450K _first_silicon

SEMICONDUCTORIRF3205TECHNICAL DATAN-Channel Power MOSFET (55V/120A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Parameter Symbol Rating Unit 1.Gate

0.11. irf3205zs.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3205ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

0.12. irf3205strlpbf.pdf Size:206K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205STRLPBFDESCRIPTIONDrain Current I =110A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMU

0.13. irf3205s.pdf Size:206K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205SDESCRIPTIONDrain Current I =110A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATI

0.14. irf3205.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205IIRF3205FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

0.15. irf3205z.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205ZIIRF3205ZFEATURESStatic drain-source on-resistance:RDS(on) 6.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Datasheet: IRF151, IRF153, IRF230, IRF240, IRF250, IRF2807, IRF2807L, IRF2807S, IRFP250N, IRF3205L, IRF3205S, IRF330, IRF3315, IRF3315L, IRF3315S, IRF340, IRF3415.

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Last Update

The following post explains the main features of mosfet IRF3205 which is fundamentally rated with drain current at a massive 110 Amps, and voltage ranging up to 55V, ideally suitable for inverter, motor control, choppers, and converter applications.

Main Features

The IRF3205 leading-edge N-Channel HEXFET® Power MOSFETs from International Rectifier implements hi-tech processing solutions to attain incredibly minimal on-resistance per silicon space.

This advantage, along with the rapid converting rate and ruggedized system layout that HEXFET power MOSFETs are popular for, offers the developer with an exceptionally cost-efficient and dependable product to be used in an array of programs.

The TO-220 bundle is globally favored for most of commercial-industrial purposes at power dissipation stages to around 50 watts. The minimal thermal resistance and reduced packet price of the TO-220 play a role to its extensive recognition all through the market.

Technical Specifications

It's technical specifications may be understood with the following data:

Irf3205 Mosfet Datasheet

Continuous Drain Current, VGS @ 10V = 110 A
Pulsed Drain Current = 390 A
At 25°C Power Dissipation = 200 W
Linear Derating Factor = 1.3 W/°C
Gate-to-Source Voltage = ± 20 V
Avalanche Current = 62 A
Repetitive Avalanche Energy = 20 mJdv/dt
Peak Diode Recovery dv/dt = 5.0 V/ns
Operating Junction and Soldering Temperature, for 10 seconds = 300 (1.6mm from case )°CYou may refer to the original datasheet for more info

Pinout Details

The pinout details of the mosfet IRF3205 can be witnessed in the below shown image:

Holding the device straight with its printed side towards you, the left side pin will be the gate, the center will be the drain, while the right side pinout will be the source of the mosfet

A Typical Application

Making a simple 500 to 5000 watt inverter using IRF3205 mosfet.

A fifty watt inverter discussed in one of my previous posts can be easily turned into a massive 500 watt inverter by simply replacing its MOSFETs by the above type.

Irf3205 Mosfet

Refer to the following link for the required circuit diagram, just use the IRF3205 for the mosfets, 24-0-24V /30A transformer and 24V 200AH battery.

The inverter can be made to produce upto 5kva if the transformer voltage is increased to 50-0-50V/100amps.

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