| Номер произв | K3878 | ||||
| Описание | Field Effect Transistor | ||||
| Производители | Toshiba | ||||
| логотип | |||||
1Page
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Symbol Unit Drain-gate voltage (RGS = 20 kΩ) Drain current Pulse (Note 1) Single pulse avalanche energy Avalanche current Channel temperature VDSS VGSS IDP EAS EAR Tstg 900 9 150 9 150 V V W A °C 1. GATE 3. SOURCE ― SC-65 2−16C1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Characteristic Max Unit Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C Note 2: VDD = 90 V, Tch = 25°C, L = 17.6 mH, RG = 25 Ω, IAR = 9 A Note 3: Repetitive rating: pulse width limited by max junction temperature This transistor is an electrostatic-sensitive device. Handle with care. 2 1 2010-05-06
Electrical Characteristics (Ta = 25°C) Gate leakage current Drain cutoff current Gate threshold voltage Forward transfer admittance Reverse transfer capacitance Rise time Turn-on time Turn-off time Test Condition IGSS IDSS Vth ⎪Yfs⎪ Crss VGS = ±30 V, VDS = 0 V VDS = 720 V, VGS = 0 V VDS = 10 V, ID = 1 mA VDS = 15 V, ID = 4 A ⎯ ⎯ ±10 ⎯ 900 ⎯ 2.0 ⎯ 4.0 3.5 7.0 ⎯ 2200 ⎯ ⎯ 190 ⎯ V V Ω pF VG1S0 V tf ID = 4 A VOUT RL = 100 Ω ⎯ 20 ⎯ toff Duty ≤ 1%, tw = 10 μs Total gate charge Gate-source charge Qg Qgd ⎯ 34 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Continuous drain reverse current (Note 1) (Note 1) Reverse recovery time Symbol IDRP trr Test Condition ⎯ IDR = 9 A, VGS = 0 V, Min Typ. Max Unit ⎯ ⎯ 27 A ⎯ 1.4 ⎯ μs Marking K3878 Lot No. Note 4: A line under a Lot No. identifies the indication of product Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Free Datasheet http://www.datasheet4u.com/
10 Tc = 25°C 8 15 6 5.25 4.75 0 DRAIN−SOURCE VOLTAGE VDS (V) ID – VDS COMMON SOURCE PULSE TEST 12 15 6 45 0 DRAIN−SOURCE VOLTAGE VDS (V) 20 VDS = 20 V 16 8 4 0 2 4 6 8 10 VDS – VGS COMMON SOURCE PULSE TEST 12 8 4 0 GATE−SOURCE VOLTAGE VGS (V) 100 VDS = 20 V 10 100 1 DRAIN CURRENT ID (A) RDS (ON) − ID COMMON SOURCE PULSE TEST 1 1 DRAIN CURRENT ID (A) Free Datasheet http://www.datasheet4u.com/ | |||||
| Всего страниц | 6 Pages | ||||
| Скачать PDF | [ K3878.PDF Даташит ] | ||||
Transistor-k3878-integrated-circuits, Find Quality transistor-k3878-integrated-circuits and Buy transistor-k3878-integrated-circuits from Reliable Global transistor-k3878-integrated-circuits Suppliers from mobile site on m.alibaba.com.
1,728 transistor k3878 products are offered for sale by suppliers on Alibaba.com, of which integrated circuits accounts for 3%, transistors accounts for 3%. A wide variety of transistor k3878 options are available to you, such as other. 2SK3878 Datasheet (PDF) 0.1. 2sk3878.pdf Size:205K toshiba. 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV) 2SK3878 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS =. 2SK3878 Datasheet, 2SK3878 PDF, 2SK3878 Data sheet, 2SK3878 manual, 2SK3878 pdf, 2SK3878, datenblatt, Electronics 2SK3878, alldatasheet, free, datasheet, Datasheets. The K3878 is a three-terminal silicon device with current conduction capability of 9A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. Threshold voltage of 4 volts.They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits,UPS, switching regulator and general purpose switching applications.
2SK3878 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3878
Маркировка: K3878
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 150 W
Предельно допустимое напряжение сток-исток |Uds|: 900 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 60 nC
Время нарастания (tr): 25 ns
Выходная емкость (Cd): 190 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.3 Ohm
Тип корпуса: SC65 TO3P
Transistor K3878
2SK3878 Datasheet (PDF)
0.1. 2sk3878.pdf Size:205K _toshiba
2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV) 2SK3878 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
0.2. 2sk3878.pdf Size:216K _inchange_semiconductor
isc N-Channel Mosfet Transistor 2SK3878FEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)Avalanche Energy SpecifiedFast SwitchingSimple Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a
8.1. 2sk3879.pdf Size:292K _toshiba
2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3879 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolu
8.2. 2sk3875-01.pdf Size:101K _fuji
2SK3875-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other
See Full List On Alldatasheet.com
8.3. 2sk3871-01mr.pdf Size:96K _fuji
2SK3871-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25
8.4. 2sk3874-01r.pdf Size:109K _fuji
Como Testar Transistor K3878
2SK3874-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless o
8.5. 2sk3876-01r.pdf Size:100K _fuji
2SK3876-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless othe
8.6. 2sk3872-01l-s-sj.pdf Size:153K _fuji
2SK3872-01L,S,SJN-CHANNEL SILICON POWER MOSFET200406Outline Drawings (mm)FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings
8.7. 2sk3870-01.pdf Size:95K _fuji
2SK3870-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
8.8. 2sk3873-01.pdf Size:112K _fuji
2SK3873-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other
8.9. 2sk387.pdf Size:235K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK387DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed applications.such as off-line switching power supplies , UPS,AC and DCmotor controls,rel
Другие MOSFET... 2SK3757, 2SK3766, 2SK3767, 2SK3798, 2SK3799, 2SK3842, 2SK3843, 2SK3845, 2SK4106, 2SK3880, 2SK3940, 2SK4003, 2SK4013, 2SK4014, 2SK4017, 2SK4023, 2SK4026.
Список транзисторов
Обновления
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02