10N60 Datasheet PDF - Inchange Semiconductor
10N60 Datasheet(PDF) 2 Page - Unisonic Technologies: Part No. 10N60: Description: 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET: Download 9 Pages: Scroll/Zoom: 100%.
- N-Channel Power MOSFET 600 V, 0.75 Features. Low ON Resistance. Low Gate Charge. ESD Diode−Protected Gate. 100% Avalanche Tested. 100% Rg Tested. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF Unit Drain−to−Source.
- N-CHANNEL POWER MOSFET: Inchange Semiconductor. 10N60: isc N-Channel MOSFET Transistor: VBsemi Electronics Co. 10N60: N-Channel 650V (D-S) Power MOSFET: Jiangsu Donghai Semicon. 10N60: 10A 600V N-channel Enhancement Mode Power MOSFET: 10N60: 10A 600V N-channel Enhancement Mode Power MOSFET: DONGGUAN YOU FENG WEI E. 10N60A 10A 600V N.
| Part Number | 10N60 | |
| Description | N-Channel Mosfet Transistor | |
| Manufacturers | Inchange Semiconductor | |
| Logo | ||
There is a preview and 10N60 download ( pdf file ) link at the bottom of this page. Total ( 2 pages ) | ||
Preview 1 page No Preview Available ! isc N-Channel Mosfet Transistor 10N60 ·Drain Current –ID= 9.2A@ TC=25℃ : VDSS= 650V(Min) : RDS(on) = 0.83Ω(Max) ·Fast Switching ·DESCRITION ·Designed for high efficiency switch mode power supply. SYMBOL VALUE VDSS Drain-Source Voltage 650 V ID Drain Current-Continuous IDM Drain Current-Single Plused PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ SYMBOL MAX UNIT Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W 1 isc & iscsemi is registered trademark www.fineprint.cn |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view | 1. - 600V, 10A, N-ch MOSFET [ Learn More ] | |
| Download | [ 10N60.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | Manufacturers |
| 10N60 | The function is N-Channel Power MOSFET. | nELL |
| 10N60 | The function is N-Channel Mosfet Transistor. | Inchange Semiconductor |
| 10N60 | The function is 600/650 Volts N-CHANNEL POWER MOSFET. | Unisonic Technologies |
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10N60 Datasheet PDF - Unisonic Technologies
| Part Number | 10N60 | |
| Description | 600/650 Volts N-CHANNEL POWER MOSFET | |
| Manufacturers | Unisonic Technologies | |
| Logo | ||
There is a preview and 10N60 download ( pdf file ) link at the bottom of this page. Total ( 9 pages ) | ||
Preview 1 page No Preview Available ! www.DataSheet4U.com 10 Amps, 600/650 Volts Power MOSFET The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. * 10A, 600V, RDS(ON) =0.73Ω@VGS =10V * Low Crss ( typical 18 pF) * 100% avalanche tested SYMBOL *Pb-free plating product number: 10N60L 3.Source Ordering Number Lead Free Plating 10N60L-x-TA3-T TO-220 123 Packing www.unisonic.com.tw 1 of 7 |
www.DataSheet4U.com Power MOSFET Fig. 2B Switching Waveforms Fig. 3B Gate Charge Waveform RD L BVDSS VDD VDD tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms www.unisonic.com.tw QW-R502-119.A Preview 5 Page |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view | 1. - 600V, 10A, N-ch MOSFET [ Learn More ] | |
| Download | [ 10N60.PDF Datasheet ] | |
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Mosfet 10n60a
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Mosfet 10n60nz
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Featured Datasheets
10N60
| Part Number | Description | Manufacturers |
| 10N60 | The function is N-Channel Power MOSFET. | nELL |
| 10N60 | The function is N-Channel Mosfet Transistor. | Inchange Semiconductor |
| 10N60 | The function is 600/650 Volts N-CHANNEL POWER MOSFET. | Unisonic Technologies |
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